Ultrafast carrier capture in InGaAs quantum posts
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3275666
Reference18 articles.
1. A Quantum Dot Single-Photon Turnstile Device
2. Coherent properties of a two-level system based on a quantum-dot photodiode
3. Efficient Carrier Relaxation Mechanism in InGaAs/GaAs Self-Assembled Quantum Dots Based on the Existence of Continuum States
4. Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm
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1. Bound states in continuum: Quantum dots in a quantum well;Physics Letters A;2013-11
2. A Review of the Terahertz Conductivity of Bulk and Nano-Materials;Journal of Infrared, Millimeter, and Terahertz Waves;2012-05-31
3. Electronic states and intraband terahertz optical transitions in InGaAs quantum rods;Journal of Applied Physics;2012-04
4. Pump-Probe Spectroscopy at Terahertz Frequencies;Terahertz Spectroscopy and Imaging;2012
5. InAs/GaAs quantum dots for THz generation;physica status solidi (c);2011-11-07
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