Depth dependence of silicon donor passivation and reactivation in hydrogenated GaAs-Reference-Cited by-同舟云学术

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Depth dependence of silicon donor passivation and reactivation in hydrogenated GaAs

Published:1989-05 Issue:18 Volume:54 Page:1769-1771
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

McCluskey F. P.,Pfeiffer Loren,West K. W.,Lopata J.,Schnoes M. Lamont,Harris T. D.,Pearton S. J.,Dautremont‐Smith W. C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.101286

Reference9 articles.

1. Donor neutralization in GaAs(Si) by atomic hydrogen

2. Hydrogenation of shallow‐donor levels in GaAs

3. Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposure

4. Electron mobility studies of the donor neutralization by atomic hydrogen in GaAs doped with silicon

5. Dopant-type effects on the diffusion of deuterium in GaAs

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Single-peak narrow-bandwidth mid-infrared thermal emitters based on quantum wells and photonic crystals;Applied Physics Letters;2013-05-13

2. Stable gallium arsenide MIS capacitors and MIS field effect transistors by (NH/sub 4/)/sub 2/S/sub x/ treatment and hydrogenation using plasma deposited silicon nitride gate insulator;IEEE Transactions on Electron Devices;2002-03

3. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001

4. Depth dependence of hydrogenation using electron cyclotron plasma in GaAs-on-Si solar cell structures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-03

5. Surface State Behavior and Neutralization of Impurities in Sulfur-Treated, Hydrogenated, and Annealed GaAs;physica status solidi (a);1998-10

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