Nonlinear photocurrent-intensity behavior of amorphous InZnO thin film transistors
Author:
Affiliation:
1. School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China
2. Institute of Microelectronics, Peking University, Beijing 100871, China
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5011687
Reference25 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Oxide semiconductors: Order within the disorder
3. Photodetecting properties of ZnO-based thin-film transistors
4. Ultraviolet detecting properties of ZnO-based thin film transistors
5. High responsivity of amorphous indium gallium zinc oxide phototransistor with Ta2O5 gate dielectric
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