Observation of piezoelectric field induced carriers in AlGaAs/InGaAs strained‐layer heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107288
Reference14 articles.
1. Strain-generated electric fields in [111] growth axis strained-layer superlattices
2. Optical properties of strained-layer superlattices with growth axis along [111]
3. Electromodulation of the electronic structure and optical properties of [111]-growth-axis superlattices
4. Optical Properties of (100) - and (111)-Oriented GaInAs/GaAs Strained-Layer Superlattices
5. Strain‐induced two‐dimensional electron gas in [111] growth‐axis strained‐layer structures
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2. Material properties of bulk InGaAs and InAlAs/InGaAs heterostructures grown on (111)B and (111)B misoriented by 1° towards 〈211〉 InP substrates;Applied Physics Letters;2000-12-25
3. Materials theory based modeling of wide band gap semiconductors: from basic properties to devices;Solid-State Electronics;2000-02
4. The effect of strain-induced polarization fields on impact ionization in a multiquantum-well structure;Applied Physics Letters;1998-11-09
5. In-plane uniaxial stress effects of AlGaAs/GaAs modulation doped heterostructures characterized by the transmission line method;Journal of Applied Physics;1998-10
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