Electroresistance effect in MoS2-Hf0.5Zr0.5O2 heterojunctions-Reference-Cited by-同舟云学术

Electroresistance effect in MoS2-Hf0.5Zr0.5O2 heterojunctions

Published:2021-02-22 Issue:8 Volume:118 Page:083106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chaudhary P.¹^ORCID,Buragohain P.¹^ORCID,Kozodaev M.²^ORCID,Zarubin S.²^ORCID,Mikheev V.²,Chouprik A.²^ORCID,Lipatov A.³^ORCID,Sinitskii A.³^ORCID,Zenkevich A.²^ORCID,Gruverman A.¹^ORCID

Affiliation:

1. Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588, USA

2. Moscow Institute of Physics and Technology, 9, Institutskiy Lane, Dolgoprudny, Moscow Region 141700, Russia

3. Department of Chemistry, University of Nebraska, Lincoln, Nebraska 68588, USA

Funder

National Science Foundation

Russian Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0035306

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5. Optical control of polarization in ferroelectric heterostructures

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