Unravelling the nanoscale mechanism of polarization reversal in a Hf0.5Zr0.5O2-based ferroelectric capacitor by vector piezoresponse force microscopy-Reference-Cited by-同舟云学术

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Unravelling the nanoscale mechanism of polarization reversal in a Hf_0.5Zr_0.5O₂-based ferroelectric capacitor by vector piezoresponse force microscopy

Published:2024 Issue:27 Volume:16 Page:13079-13088
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Chouprik Anastasia¹^ORCID,Spiridonov Maxim¹

Affiliation:

1. Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Russia

Abstract

The nanoscopic nature of polarization reversal in hafnium oxide thin films consists in a combination of 180°-flipping of the polarization vector and ferroelastic switching. The shear piezoelectric coefficient is twice the longitudinal coefficient.

Funder

Russian Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NR/D4NR01124D

Reference40 articles.

1. Ferroelectricity in hafnium oxide thin films

2. T.Francois , L.Grenouillet , J.Coignus , P.Blaise , C.Carabasse , N.Vaxelaire , T.Magis , F.Aussenac , V.Loup , and C.Pellissier , et al. , in 2019 IEEE International Electron Devices Meeting (IEDM) , 2019

3. 1T1C FeRAM memory array based on ferroelectric HZO with capacitor under bitline

4. Flexible HfO2-based ferroelectric memristor

5. Superflexible and Stretchable Ferroelectric Memory on a Biocompatible Platform

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