Dislocation effect on the activation efficiency profile in Si‐implanted and SiN‐capped annealed GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341341
Reference19 articles.
1. Direct observation of dislocation effects on threshold voltage of a GaAs field‐effect transistor
2. Effect of Dislocations on Sheet Carrier Concentration of Si-Implanted, Semi-Insulating, Liquid-Encapsulated Czochralski Grown GaAs
3. Substrate effects on the threshold voltage of GaAs field‐effect transistors
4. The Dependence of Threshold Voltage Scattering of GaAs MESFET on Annealing Method
5. Activation mechanism for Si implanted into semi‐insulating GaAs
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1. Modeling of diffusion of magnesium in gallium arsenide. 1. Thermal diffusion of Mg in AlxGa1?xAs;Journal of Engineering Physics and Thermophysics;1995
2. Ion Implantation Induced Extended Defects in GaAs;Handbook of Compound Semiconductors;1995
3. Simulation of the diffusion of silicon in gallium arsenide. 4. DPSU program and results of numerical calculations;Journal of Engineering Physics and Thermophysics;1994-06
4. Contactless Characterization of the Surface Property of the Si+-Implanted GaAs;MRS Proceedings;1994
5. Modeling of silicon diffusion in gallium arsenide;Journal of Engineering Physics and Thermophysics;1994
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