Simulation of the diffusion of silicon in gallium arsenide. 4. DPSU program and results of numerical calculations-Reference-Cited by-同舟云学术

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Simulation of the diffusion of silicon in gallium arsenide. 4. DPSU program and results of numerical calculations

Published:1994-06 Issue:6 Volume:66 Page:648-650
ISSN:1062-0125
Container-title:Journal of Engineering Physics and Thermophysics
language:en
Short-container-title:J Eng Phys Thermophys

Author:

Velichko O. I.,Egorov A. A.,Fedoruk S. K.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering,Condensed Matter Physics

Link

http://link.springer.com/content/pdf/10.1007/BF00867966.pdf

Reference8 articles.

1. O. I. Velichko, A. A. Egorov, and S. K. Fedoruk, Inzh.-Fiz. Zh.,65, No. 5, 567?572 (1993).

2. O. I. Velichko, A. A. Egorov, and S. K. Fedoruk, Inzh.-Fiz. Zh.,66, No. 1, 83?86 (1994).

3. O. I. Velichko, A. A. Egorov, and S. K. Fedoruk, Inzh.-Fiz. Zh.,66, No. 4, 484?489 (1994).

4. D. G. Deppe, N. Holonyak, Jr., F. A. Kish, and J. E. Baker, Appl. Phys. Lett.,50, No. 15, 998?1000 (1987).

5. T. Y. Tan and U. Gosele, Mater. Sci. and Eng.,B1, No. 1, 47?65 (1988).

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1. Simulation of silicon diffusion in GaAs;Physica B: Condensed Matter;2011-03

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