The strain models of misfit dislocations at cubic semiconductors hetero-interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4820385
Reference27 articles.
1. Misfit dislocation generation in epitaxial layers
2. Atomic core structure of Lomer dislocation at GaAs/(001)Si interface
3. Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayers thickness
4. Antimonide-based compound semiconductors for electronic devices: A review
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