A comparison of the Hall-effect and secondary ion mass spectroscopy on the shallow oxygen donor in unintentionally doped GaN films-Reference-Cited by-同舟云学术

A comparison of the Hall-effect and secondary ion mass spectroscopy on the shallow oxygen donor in unintentionally doped GaN films

Published:2000-08-15 Issue:4 Volume:88 Page:1811-1817
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Meister D.,Böhm M.,Topf M.,Kriegseis W.,Burkhardt W.,Dirnstorfer I.,Rösel S.,Farangis B.,Meyer B. K.,Hoffmann A.,Siegle H.,Thomsen C.,Christen J.,Bertram F.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1305549

Reference26 articles.

1. Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System

2. Atomic geometry and electronic structure of native defects in GaN

3. Abinitiostudy of oxygen point defects in GaAs, GaN, and AlN

4. Native defects in gallium nitride

5. On the origin of free carriers in high-conducting n-GaN

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