Experimental and theoretical study of capacitive memory of metal-oxide-semiconductor devices based on Er-doped In2O3 nano-column arrays
Author:
Affiliation:
1. Department of Physics, National Institute of Technology Durgapur, Durgapur 713209, India
2. Department of Electronics and Communication Engineering, National Institute of Technology Nagaland, Dimapur 797103, Nagaland, India
Funder
Science and Engineering Research Board
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0013904
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