A New Theoretical Insight Into ZnO NWs Memristive Behavior-Reference-Cited by-同舟云学术

A New Theoretical Insight Into ZnO NWs Memristive Behavior

Published:2016-03-02 Issue:4 Volume:16 Page:2543-2547
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Raffone Federico¹,Risplendi Francesca²,Cicero Giancarlo¹

Affiliation:

1. Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, Corso Duca degli Abruzzi 24, Torino 10129, Italy

2. Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b00085

Reference39 articles.

1. Memristive devices for computing

2. Memristor, Hodgkin–Huxley, and Edge of Chaos

3. Sub-nanosecond switching of a tantalum oxide memristor

4. Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

5. Non-volatile resistive switching for advanced memory applications

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