Temperature and time stability of process-induced strain engineering on 2D materials-Reference-Cited by-同舟云学术

Temperature and time stability of process-induced strain engineering on 2D materials

Published:2022-01-14 Issue:2 Volume:131 Page:024304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Peña Tara¹^ORCID,Azizimanesh Ahmad¹^ORCID,Qiu Liangyu²^ORCID,Mukherjee Arunabh²^ORCID,Vamivakas A. Nick²³^ORCID,Wu Stephen M.¹³^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627, USA

2. The Institute of Optics, University of Rochester, Rochester, New York 14627, USA

3. Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, USA

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0075917

Reference30 articles.

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3. A. O’Neill, S. Olsen, E. Escobedo-Cousin, J. Varzgar, R. Agaiby, S. Chattopadhyay, P. Dobrosz, and S. Bull, “Strained silicon technology,” in 2006 8th International Conference on Solid-State Integrated Circuit Technology Proceedings (IEEE, 2006), pp. 1–4.

4. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

5. Device scaling limits of Si MOSFETs and their application dependencies

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