Internal photoemission of electrons from Ta-based conductors into SiO[sub 2] and HfO[sub 2] insulators
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference34 articles.
1. The International Technology Roadmap for Semiconductors 2005(Semiconductor Industry Association, San Jose, CA, 2005).
2. Alternative dielectrics to silicon dioxide for memory and logic devices
3. High-κ gate dielectrics: Current status and materials properties considerations
4. Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I
5. Impact of gate workfunction on device performance at the 50 nm technology node
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