X‐ray photoelectron spectroscopic investigation of carbon incorporation and segregation during pseudomorphic growth of Si1−yCyon Si(001)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363569
Reference11 articles.
1. Growth and properties of strained Si1-x-yGexCylayers
2. Investigation of the high temperature behavior of strained Si1−yCy /Si heterostructures
3. Backscattering analysis of Si1−yCy layers using the 12C(4He,4He) 12C resonance at 4.265 MeV
4. Lattice distortion in a strain-compensatedSi1−x−yGexCylayer on silicon
5. In situ film thickness and temperature control of molecular beam epitaxy growth by pyrometric interferometry
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