Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4831665
Reference35 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Device Characteristics of Amorphous Indium Gallium Zinc Oxide TFTs Sputter Deposited with Different Substrate Biases
3. Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an O2 plasma-treated insulator
4. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
5. Recent progress in transparent oxide semiconductors: Materials and device application
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