Single-crystalline metal filament-based resistive switching in a nitrogen-doped carbon film containing conical nanopores-Reference-Cited by-同舟云学术

Single-crystalline metal filament-based resistive switching in a nitrogen-doped carbon film containing conical nanopores

Published:2015-02-23 Issue:8 Volume:106 Page:083104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhuge Fei¹^ORCID,Li Jun¹²,Chen Hao¹³,Wang Jun⁴,Zhu Liqiang¹,Bian Baoru¹,Fu Bing¹,Wang Qin⁴,Li Le⁴,Pan Ruobing¹,Liang Lingyan¹,Zhang Hongliang¹,Cao Hongtao¹,Zhang Hong³,Li Zhicheng³,Gao Junhua¹,Li Kang¹

Affiliation:

1. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

2. Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China

3. School of Materials Science and Engineering, Central South University, Changsha 410083, China

4. Department of Microelectronic Science and Engineering, Faculty of Science, Ningbo University, Ningbo 315211, China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4913588

Reference32 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

3. Nanobatteries in redox-based resistive switches require extension of memristor theory

4. Observation of conducting filament growth in nanoscale resistive memories

5. Forming and switching mechanisms of a cation-migration-based oxide resistive memory

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