Thermal-assisted electroforming enables performance improvement by suppressing the overshoot current in amorphous carbon-based electrochemical metallization memory

Author:

Tian Qiaoling1,Zhao Xiaoning1ORCID,Zhang Xiaohan1,Lin Huai23,Wang Di23,Xing Guozhong23ORCID,Wang Zhongqiang1ORCID,Lin Ya1ORCID,Xu Haiyang1,Liu Yichun1

Affiliation:

1. Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China

2. Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

3. University of the Chinese Academy of Sciences, Beijing 100049, China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Fund for Distinguished Young Scholars

National Natural Science Foundation of China

Overseas Expertise Introduction Project for Discipline Innovation

Director Fund of Institute of Microelectronics and the Dedicated Fund of Chinese Academy of Sciences

Strategic Priority Research Program of the Chinese Academy of Sciences

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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