Experimental study of perpendicular transport in weakly coupled AlxGa1−xN/GaN superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1631382
Reference7 articles.
1. Improved mobilities and resistivities in modulation-doped p-type AlGaN/GaN superlattices
2. Experimental and theoretical study of acceptor activation and transport properties in p-type AlxGa1−xN/GaN superlattices
3. Polarization-enhanced Mg doping of AlGaN/GaN superlattices
4. Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes
5. Enhancement of deep acceptor activation in semiconductors by superlattice doping
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2. Vertical conductivity and Poole–Frenkel-ionization of Mg acceptors in AlGaN short-period superlattices with high Al mole fraction;Applied Physics Letters;2020-12-21
3. Double superlattice structure for improving the performance of ultraviolet light-emitting diodes;Chinese Physics B;2019-03
4. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice;Scientific Reports;2017-03-14
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