Insituepitaxial growth of Bi2(Sr,Ca)3Cu2Oxfilms by ion beam sputtering with an atomic oxygen source
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103286
Reference7 articles.
1. Single-Crystal YBa2Cu3O7-xThin Films by Activated Reactive Evaporation
2. Preparation of Bi‐Sr‐Ca‐Cu‐O thin film by coevaporation and its thermal stability
3. Insituformation of superconducting YBa2Cu3O7−xthin films using pure ozone vapor oxidation
4. Thin Film Growth of YBa2Cu3O7-xby ECR Oxygen Plasma Assisted Reactive Evaporation
5. Insituepitaxial growth of Y1Ba2Cu3O7−xfilms by molecular beam epitaxy with an activated oxygen source
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1. Oxygen partial pressure dependences ofa cphase ratio, crystallinity, surface roughness and in-plane orientation in YBCO thin film depositions by IBS;Superconductor Science and Technology;2002-12-10
2. Preparation of superconductive Y-Ba-Cu-O/Bi-Sr-Ca-Cu-O heteroepitaxial bilayer films by Nd:YAG laser ablation;IEEE Transactions on Appiled Superconductivity;2001-03
3. Low temperature growth of Bi2(Sr,Ca)2CuOx thin films by ion beam sputtering and effects of oxygen plasma;Physica C: Superconductivity;1999-11
4. Growth phenomena of Bi2Sr2CaCu2O8 + δ thin films deposited on (110) oriented SrTiO3 substrates;Thin Solid Films;1997-07
5. Effects of oxygen ion assist at 1–10 eV on growth of Bi2(Sr,Ca)2CuOx films at 540 °C by ion–beam sputtering;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1997-07
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