Low temperature diffusion of impurities in hydrogen implanted silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2721772
Reference19 articles.
1. Silicon on insulator material technology
2. Defects in single-crystal silicon induced by hydrogenation
3. The Diffusivity and Solubility of Oxygen in Silicon
4. Oxygen-dislocation interactions in silicon at temperatures below 700 °C: Dislocation locking and oxygen diffusion
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1. 6H-SiC blistering efficiency as a function of the hydrogen implantation fluence;Applied Surface Science;2019-02
2. Incorporation of oxygen in SiC implanted with hydrogen;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-12
3. Diffusion and impurity segregation in hydrogen-implanted silicon carbide;Journal of Applied Physics;2014-06-14
4. Influence of radiation defects on formation of thermal donors in silicon irradiated with high-energy helium ions;Materials Science and Engineering: B;2009-03
5. What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?;Journal of The Electrochemical Society;2009
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