Electrical properties of Sb implanted Si1−xGexalloy layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108043
Reference9 articles.
1. Rutherford backscattering study of crystal orientation dependent annealing effects in high-dose antimony implanted silicon
2. Metastable doping behavior in antimony‐implanted (100) silicon
3. Ion beam induced epitaxy of deposited amorphous Si and Si‐Ge films
4. Solid phase epitaxy of stressed and stress‐relaxed Ge‐Si alloys
5. Sb Implantation in Si1–xGex/Si(100) Structures
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Aggregation and precipitation in high dose As ion implanted Ge0.5Si0.5 alloy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-12
2. B implants in Si1−xGex/Si;Applied Physics Letters;1996-01-15
3. Dopant activation in Sb-implanted relaxed Si1?xGex alloy layers grown on compositionally graded buffers;Applied Physics A Materials Science & Processing;1995-12
4. Solid‐phase epitaxial regrowth and dopant activation of P‐implanted metastable pseudomorphic Ge0.12Si0.88on Si(100);Journal of Applied Physics;1995-05-15
5. Precipitation in heavily arsenic‐implanted GexSi1−x alloys;Applied Physics Letters;1995-02-27
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