Electron transport properties of double delta-doped GaAs structures grown by low-pressure metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121013
Reference10 articles.
1. Electron mobility enhancement from coupled wells in delta‐doped GaAs
2. Characteristics of graded‐like multiple‐delta‐doped GaAs field effect transistors
3. Subband population and electron subband mobility for two interacting Si-δ-doping layers in GaAs
4. Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300K
5. Si delta‐doped field‐effect transistors by atmospheric pressure metalorganic chemical vapor deposition
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1. Modulation of nonlinear optical rectification, second, and third harmonic generation coefficients in n-type quadruple δ-doped GaAs quantum wells under external fields;Physica B: Condensed Matter;2024-10
2. Efectos del desorden estructural sobre el cambio en el índice de refracción de un sistema δ-dopado simple en GaAs;Revista Mexicana de Física;2024-07-01
3. Effects of external fields on the nonlinear optical properties of an n-type quadruple δ-doped GaAs quantum wells;The European Physical Journal Plus;2022-06
4. Hydrostatic pressure and interlayer distance effects on non-linear optical proprieties in n-type double delta-doped GaAs quantum wells;Physica Scripta;2020-09-03
5. Model of n-type quadruple δ-doped GaAs quantum wells;The European Physical Journal B;2020-01
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