Formation of β‐SiC at the interface between an epitaxial Si layer grown by rapid thermal chemical vapor deposition and a Si substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345559
Reference20 articles.
1. Silicon epitaxy at 650–800 °C using low‐pressure chemical vapor deposition both with and without plasma enhancement
2. Epitaxially grown base transistor for high-speed operation
3. Nonequilibrium boron doping effects in low‐temperature epitaxial silicon films
4. Insitusubstrate‐surface cleaning for very low temperature silicon epitaxy by low‐kinetic‐energy particle bombardment
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparison of Strain Characteristics and Contact Resistances of Heavily Phosphorus‐Doped Si Formed by Phosphorus Implantation and In Situ Phosphorus‐Doped Si Epitaxial Growth;physica status solidi (a);2020-03-29
2. Defect Generation Mechanism of Epitaxially Grown In Situ Phosphorus‐Doped Silicon on Silicon (111) Substrate;physica status solidi (a);2020-03-13
3. Effect of thermal annealing on the strain and microstructures of in-situ phosphorus-doped Si1−xCx films grown on blanket and patterned silicon wafers;Journal of Alloys and Compounds;2019-06
4. Model Reduction for Sliding Mode Control of Rapid Thermal Processing System;Recent Advances in Sliding Modes: From Control to Intelligent Mechatronics;2015
5. Airborne Molecular Contamination;Developments in Surface Contamination and Cleaning;2008
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3