Presence of monovalent oxygen anions in oxides demonstrated using X-ray photoelectron spectra-Reference-Cited by-同舟云学术

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Presence of monovalent oxygen anions in oxides demonstrated using X-ray photoelectron spectra

Published:2016-01-11 Issue:2 Volume:108 Page:021905
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wu L. Q.¹,Li S. Q.¹²,Li Y. C.³,Li Z. Z.¹,Tang G. D.¹,Qi W. H.¹,Xue L. C.¹,Ding L. L.¹,Ge X. S.¹

Affiliation:

1. Hebei Advanced Thin Film Laboratory, Department of Physics, Hebei Normal University, Shijiazhuang 050024, People's Republic of China

2. School of Sciences, Hebei University of Science and Technology, Shijiazhuang 050018, People's Republic of China

3. No. 46 Research Institute of China Electronics Technology Group Corporation, Tianjin 300220, People's Republic of China

Funder

National Natural Science Foundation of China (NSFC)

Natural Science Foundation of Hebei Province (Hebei Provincial Natural Science Foundation)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4939976

Reference19 articles.

1. Donor impurity band exchange in dilute ferromagnetic oxides

2. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

3. Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO

4. Defect-trapped electrons and ferromagnetic exchange in ZnO

5. Magnetism of Co-doped ZnO thin films

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