Controlling domain configuration of the sensing layer for magnetic tunneling junctions by using exchange bias-Reference-Cited by-同舟云学术

Controlling domain configuration of the sensing layer for magnetic tunneling junctions by using exchange bias

Published:2020-02-01 Issue:2 Volume:10 Page:025119
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Ranjbar Sina¹,Al-Mahdawi Muftah²³,Oogane Mikihiko¹²³,Ando Yasuo¹²³

Affiliation:

1. Department of Applied Physics, Tohoku University, Sendai 980-8579, Japan

2. Center for Science and Innovation in Spintronics (Core Research Cluster), Organization for Advanced Studies, Tohoku University, Sendai 980-8577, Japan

3. Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Japan

Funder

JSPS KAKENHI

center of science and innovation in spintronics

center for spintronics research network

Tohoku university, the S-innovation programm

Japan Science and Technology Agency

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5130486

Reference18 articles.

1. Giant magnetoresistive in soft ferromagnetic multilayers

2. Fabrication of Magnetic Tunnel Junctions with a Synthetic Ferrimagnetic Free Layer for Magnetic Field Sensor Applications

3. Low aspect ratio micron size tunnel magnetoresistance sensors with permanent magnet biasing integrated in the top lead

4. Critical challenges for picoTesla magnetic-tunnel-junction sensors

5. Exchange-biased spin-valves for magnetic storage

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