Fabrication of Magnetic Tunnel Junctions with a Synthetic Ferrimagnetic Free Layer for Magnetic Field Sensor Applications-Reference-Cited by-同舟云学术

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Fabrication of Magnetic Tunnel Junctions with a Synthetic Ferrimagnetic Free Layer for Magnetic Field Sensor Applications

Published:2011-01-01 Issue:1R Volume:50 Page:013001
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fujiwara Kousuke,Oogane Mikihiko,Kou Futoyoshi,Watanabe Daisuke,Naganuma Hiroshi,Ando Yasuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference15 articles.

1. Giant magnetic tunneling effect in Fe/Al2O3/Fe junction

2. Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions

3. Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)

4. High density submicron magnetoresistive random access memory (invited)

5. PtMn-based spin-dependent tunneling materials with thin alumina barrier fabricated by two-step natural oxidation

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Controlling domain configuration of the sensing layer for magnetic tunneling junctions by using exchange bias;AIP Advances;2020-02-01

2. Magnetic sensor based on serial magnetic tunnel junctions for highly sensitive detection of surface cracks;Journal of Applied Physics;2017-11-01

3. Magnetic tunnel junctions using perpendicularly magnetized synthetic antiferromagnetic reference layer for wide-dynamic-range magnetic sensors;Applied Physics Letters;2017-01-02

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