UV laser incorporation of dopants into silicon: Comparison of two processes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335982
Reference8 articles.
1. Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group‐III and group‐V dopants in silicon
2. A model for laser induced diffusion
3. Solid Solubilities of Impurity Elements in Germanium and Silicon*
4. Cell formation and interfacial instability in laser‐annealed Si‐In and Si‐Sb alloys
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2. Improving dopant incorporation during femtosecond-laser doping of Si with a Se thin-film dopant precursor;Applied Physics A;2013-03-29
3. Pulsed lasers in photovoltaic technology;SPIE Proceedings;2011-08-15
4. Doping;Laser Processing and Chemistry;2011
5. Fabrication and sub-band-gap absorption of single-crystal Si supersaturated with Se by pulsed laser mixing;Applied Physics A;2009-11-12
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