Electronic states in spherical GaN nanocrystals embedded in various dielectric matrices: The k ⋅ p-calculations
Author:
Affiliation:
1. Lobachevsky University, Nizhny Novgorod 603950, Russia
2. Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur 342011, India
Funder
Department of Science and Technology, Ministry of Science and Technology (DST)
Ministry of Education and Science of the Russian Federation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4939938
Reference36 articles.
1. Gallium nitride devices for power electronic applications
2. Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer
3. Improved growth of GaN layers on ultra thin silicon nitride/Si (111) by RF-MBE
4. Formation of InAs nanocrystals in Si by high-fluence ion implantation
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