High quality fluorinated silicon oxide films prepared by plasma enhanced chemical vapor deposition at 120 °C
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.117463
Reference13 articles.
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Preparation of low leakage current fluorine-doped silicon-oxycarbide by PECVD;Journal of Physics and Chemistry of Solids;2008-02
2. Fluorine-Doped Carbide Dielectric Barrier to Improve Copper Interconnect Line-to-Line Voltage Breakdown;Electrochemical and Solid-State Letters;2007
3. Fluorinated–chlorinated SiO2 films prepared at low temperature by remote plasma-enhanced chemical-vapor deposition using mixtures of SiF4 and SiCl4;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-03
4. FTIR Characterization of Fluorine Doped Silicon Dioxide Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition;Chinese Physics Letters;2000-12-01
5. Effect of hydrogen dilution on the structure of SiOF films prepared by remote plasma enhanced chemical vapor deposition from SiF4-based plasmas;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2000-11
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