Transformation behavior of room-temperature-stable metastable defects in hydrogen-implanted n-type silicon studied by isothermal deep-level transient spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2216430
Reference11 articles.
1. Hydrogen in Crystalline Semiconductors
2. Deep state of hydrogen in crystalline silicon: Evidence for metastability
3. Bond-centered hydrogen in silicon studied byin situdeep-level transient spectroscopy
4. Acceptor state of monoatomic hydrogen in silicon and the role of oxygen
5. Production of Metastable Defects in n-Type Silicon by Hydrogen Implantation at 88 K
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1. M-Center in Neutron-Irradiated 4H-SiC;Crystals;2021-11-18
2. M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies;Journal of Applied Physics;2021-09-28
3. M center in 4 H -SiC is a carbon self-interstitial;Physical Review B;2021-05-28
4. Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC;Journal of Physics D: Applied Physics;2012-10-16
5. Enhancement of Defect Production Rates in n-Type Silicon by Hydrogen Implantation Near 270 K;Journal of Electronic Materials;2010-03-24
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