Circular polarization from a nonmagnetic p-i-n resonant tunneling diode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2472522
Reference17 articles.
1. Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier
2. Highly Spin-Polarized Room-Temperature Tunnel Injector for Semiconductor Spintronics using MgO(100)
3. Optical investigation of electrical spin injection into semiconductors
4. Injection and detection of a spin-polarized current in a light-emitting diode
5. Electrical spin injection in a ferromagnetic semiconductor heterostructure
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1. Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes;Journal of Electronic Materials;2018-01-16
2. Spin Polarization of Carriers in InGaAs Self-Assembled Quantum Rings Inserted in GaAs-AlGaAs Resonant Tunneling Devices;Journal of Electronic Materials;2017-03-02
3. Hole spin injection from a GaMnAs layer into GaAs–AlAs–InGaAs resonant tunneling diodes;Journal of Physics D: Applied Physics;2016-03-24
4. Spin polarization of carriers in resonant tunneling devices containing InAs self-assembled quantum dots;Superlattices and Microstructures;2015-12
5. Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes;Journal of Applied Physics;2014-08-07
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