Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes-Reference-Cited by-同舟云学术

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Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes

Published:2014-08-07 Issue:5 Volume:116 Page:054506
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Awan I. T.¹,Galeti H. V. A.²,Galvão Gobato Y.¹,Brasil M. J. S. P.³,Taylor D.⁴,Henini M.⁴

Affiliation:

1. Departamento de Física, Universidade Federal de São Carlos (UFSCAR) 13560-905, São Carlos, SP, Brazil

2. Departamento de Engenharia Elétrica, Universidade Federal de São Carlos 13560-905, São Carlos, SP, Brazil

3. Institute of Physics Gleb Wataghin, UNICAMP, Campinas, Brazil

4. School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham, Nottingham NG7 2RD, United Kingdom

Funder

São Paulo Research Foundation (FAPESP)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4891996

Reference31 articles.

1. Semiconductor spintronics

2. Spintronics: Fundamentals and applications

3. Spin-dependent resonant tunneling in symmetrical double-barrier structures

4. Voltage-Controlled Spin Selection in a Magnetic Resonant Tunneling Diode

5. Electric-field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devices

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