Discrete AlN mole fraction of n/12 (n = 4–8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates-Reference-Cited by-同舟云学术

Discrete AlN mole fraction of n/12 (n = 4–8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates

Published:2021-04-28 Issue:16 Volume:129 Page:164503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nagasawa Yosuke¹^ORCID,Hirano Akira¹^ORCID,Ippommatsu Masamichi¹,Sako Hideki²,Hashimoto Ai²,Sugie Ryuichi²^ORCID,Honda Yoshio³,Amano Hiroshi³⁴,Akasaki Isamu⁵⁶,Kojima Kazunobu⁷^ORCID,Chichibu Shigefusa F.³⁷^ORCID

Affiliation:

1. UV Craftory Co., Ltd., Bldg. D, 2-98 Yashirodai, Nagoya 465-0092, Japan

2. Toray Research Center, Inc., Otsu 520-8567, Japan

3. Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601, Japan

4. Venture Business Laboratory, Nagoya University, Nagoya 464-8601, Japan

5. Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan

6. Department of Materials Science and Engineering, Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

7. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy