Discrete wavelengths observed in electroluminescence originating from Al1/2Ga1/2N and Al1/3Ga2/3N created in nonflat AlGaN quantum wells-Reference-Cited by-同舟云学术

Discrete wavelengths observed in electroluminescence originating from Al1/2Ga1/2N and Al1/3Ga2/3N created in nonflat AlGaN quantum wells

Published:2021-09-07 Issue:48 Volume:54 Page:485107
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Nagasawa Yosuke^ORCID,Kojima Kazunobu,Hirano Akira,Sako Hideki,Hashimoto Ai,Sugie Ryuichi^ORCID,Ippommatsu Masamichi,Honda Yoshio,Amano Hiroshi,Chichibu Shigefusa F

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1088/1361-6463/ac2065/pdf

Reference35 articles.

1. High power AlGaN ultraviolet light emitters

2. High-output-power 255/280/310 nm deep ultraviolet light-emitting diodes and their lifetime characteristics

3. Improving the Efficiency of AlGaN Deep‐UV LEDs by Using Highly Reflective Ni/Al p‐Type Electrodes

4. Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

5. Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output

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1. Carrier transport barrier in AlGaN-based deep ultraviolet LEDs on offcut sapphire substrates;Chinese Optics Letters;2024

2. Metastable atomic-ordered configurations for Al_1/2Ga_1/2N predicted by Monte-Carlo method based on first-principles calculations;Journal of Physics: Condensed Matter;2023-12-20

3. Weak metastability of Al _x Ga_1−xN (x = 13/24, 15/24, 17/24) shown by analyzing AlGaN grown on AlN with dense macrosteps;Applied Physics Express;2022-06-27

4. Dual-peak electroluminescence spectra generated from Al _n _/12Ga_1-n/12N (n = 2, 3, 4) for AlGaN-based LEDs with nonflat quantum wells;Journal of Physics D: Applied Physics;2022-03-29