Optical properties and device applications of (InGa)As self-assembled quantum dots grown on (311)B GaAs substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121961
Reference15 articles.
1. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices
2. Effect of strain on surface morphology in highly strained InGaAs films
3. Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor deposition
4. Photoluminescence and time-resolved photoluminescence characteristics of InxGa(1−x)As/GaAs self-organized single- and multiple-layer quantum dot laser structures
5. State filling and time-resolved photoluminescence of excited states inInxGa1−xAs/GaAs self-assembled quantum dots
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