Photoluminescence excitation measurements on erbium implanted GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365985
Reference14 articles.
1. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials
2. Room‐temperature electroluminescence from Er‐doped crystalline Si
3. Impurity enhancement of the 1.54‐μm Er3+luminescence in silicon
4. 1.54‐μm photoluminescence from Er‐implanted GaN and AlN
5. Photo-, cathodo-, and electroluminescence from erbium and oxygen co-implanted GaN
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2. Structural Modification of Sol-Gel Synthesized V2O5and TiO2Thin Films with/without Erbium Doping;Advances in Materials Science and Engineering;2014
3. Luminescence properties of Eu-doped GaN under resonant excitation and quantitative evaluation of luminescent sites;Journal of Applied Physics;2013-07-28
4. Photoluminescence of V-doped GaN thin films grown by MOVPE technique;Microelectronics Journal;2006-01
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