Layered graphene/GaS van der Waals heterostructure: Controlling the electronic properties and Schottky barrier by vertical strain-Reference-Cited by-同舟云学术

Layered graphene/GaS van der Waals heterostructure: Controlling the electronic properties and Schottky barrier by vertical strain

Published:2018-10-22 Issue:17 Volume:113 Page:171605
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Pham Khang D.¹²,Hieu Nguyen N.³^ORCID,Phuc Huynh V.⁴^ORCID,Fedorov I. A.⁵^ORCID,Duque C. A.⁶,Amin B.⁷,Nguyen Chuong V.⁸^ORCID

Affiliation:

1. Theoretical Physics Research Group, Advanced Institute of Materials Science, Ton Duc Thang University, Ho Chi Minh City 756636, Vietnam

2. Faculty of Applied Sciences, Ton Duc Thang University, Ho Chi Minh City 756636, Vietnam

3. Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam

4. Division of Theoretical Physics, Dong Thap University, Cao Lanh City, Dong Thap 870000, Vietnam

5. Institute of Fundamental Sciences, Kemerovo State University, Kemerovo 650000, Russia

6. Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín 050034, Colombia

7. Department of Physics, Hazara University, Mansehra 21300, Pakistan

8. Department of Materials Science and Engineering, Le Quy Don Technical University, Hanoi 100000, Vietnam

Funder

National Foundation for Science and Technology Development

Ministry of Education and Science of the Russian Federation

Higher Education Commision, Pakistan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5055616

Reference61 articles.

1. The rise of graphene

2. The electronic properties of graphene

3. A roadmap for graphene

4. Semiconducting Group 15 Monolayers: A Broad Range of Band Gaps and High Carrier Mobilities

5. Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS

Cited by 181 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. CrI3/Arsenene vdW heterstructure: Outstanding physical properties and substantially enhanced magnetic stability;Applied Surface Science;2024-10

2. The optical and tunable electronic properties of WTe2/ZnI2 heterostructures under the influence of strain and electric field;Materials Science in Semiconductor Processing;2024-10

3. Device Transport Characteristics of Monolayer SnS₂ and HfS₂ Field-Effect Transistors with Semimetal Contacts;The Journal of Physical Chemistry C;2024-08-15

4. Spin–orbit coupling tunable electronic properties of 1T′-MoS2 and ternary Janus 1T′-MoSSe monolayers: Theoretical prediction;Chemical Physics;2024-07

5. First-Principles Study of the Schottky Contact, Tunneling Probability, and Optical Properties of MX/TiB₄ Heterojunctions (M = Ge, Sn; X = S, Se, Te): Strain Engineering Tunability;ACS Applied Materials & Interfaces;2024-06-06