Optical studies of excitons in Ga0.47In0.53As/InP multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98007
Reference15 articles.
1. Investigation of InGaAs-InP quantum wells by optical spectroscopy
2. Room‐temperature excitons in 1.6‐μm band‐gap GaInAs/AlInAs quantum wells
3. Observation of heavy-hole and light-hole excitons in InGaAs/InAlAs MQW structures at room temperature
4. Photoluminescence from In0.53Ga0.47As/InP quantum wells grown by molecular beam epitaxy
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2. InAs0.45P0.55/InP strained multiple quantum wells intermixed by inductively coupled plasma etching;Materials Research Bulletin;2009-12
3. Band offsets of Al[sub x]Ga[sub 1−x]SbAs/InGaAs heterojunctions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
4. Temperature dependence of the photoluminescence properties and band gap energy of InxGa1−xAs/GaAs quantum wells;Journal of Electronic Materials;2000-12
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