Electron tunneling through GaAs grain boundaries
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93138
Reference12 articles.
1. Zero‐bias resistance of grain boundaries in neutron‐transmutation‐doped polycrystalline silicon
2. The dc voltage dependence of semiconductor grain‐boundary resistance
3. Direct Measurement of Electron Emission from Defect States at Silicon Grain Boundaries
4. Anomalous low‐frequency grain‐boundary capacitance in silicon
5. Grain boundary recombination: Theory and experiment in silicon
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