Carrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3548544
Reference16 articles.
1. Optical gain of strained GaAsSb/GaAs quantum-well lasers: A self-consistent approach
2. Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs
3. Optical properties of strained antimonide-based heterostructures
4. Selectively excited photoluminescence of GaAs1−xSbx/GaAs single quantum wells
5. Band lineup inGaAs1−xSbx/GaAs strained-layer multiple quantum wells grown by molecular-beam epitaxy
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