Nucleation rate reduction through stress relief of thermally annealed hydrogenated amorphous silicon films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4803686
Reference20 articles.
1. Thin-film transistors deposited by hot-wire chemical vapor deposition
2. Material quality requirements for efficient epitaxial film silicon solar cells
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4. Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters
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Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of stress on crystallization behavior in a Fe-based amorphous ribbon: An in situ synchrotron radiation X-ray diffraction study;Journal of Magnetism and Magnetic Materials;2019-01
2. The effect of film tensile stress on crystallite nucleation and growth in thermally annealed a-Si:H;Journal of Applied Physics;2014-02-28
3. Finite-thickness effect on crystallization kinetics in thin films and its adaptation in the Johnson–Mehl–Avrami–Kolmogorov model;Journal of Applied Physics;2014-01-28
4. Publisher's Note: “Nucleation rate reduction through stress relief of thermally annealed hydrogenated amorphous silicon films” [J. Appl. Phys. 113, 173509 (2013)];Journal of Applied Physics;2013-07-07
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