Modulation of flat-band voltage on H-terminated silicon-on-insulator pseudo–metal–oxide–semiconductor field effect transistors by adsorption and reaction events-Reference-Cited by-同舟云学术

Modulation of flat-band voltage on H-terminated silicon-on-insulator pseudo–metal–oxide–semiconductor field effect transistors by adsorption and reaction events

Published:2011-05-15 Issue:10 Volume:109 Page:104904
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dubey Girjesh,Rosei Federico,Lopinski Gregory P.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3583559

Reference31 articles.

1. Molecular Control over Semiconductor Surface Electronic Properties: Dicarboxylic Acids on CdTe, CdSe, GaAs, and InP

2. Enhanced conductance of chlorine-terminated Si(111) surfaces: Formation of a two-dimensional hole gas via chemical modification

3. Distinguishing between dipoles and field effects in molecular gated transistors

4. Molecularly Controlled Metal−Semiconductor Junctions on Silicon Surface: A Dipole Effect

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