Molecularly Controlled Metal−Semiconductor Junctions on Silicon Surface: A Dipole Effect-Reference-Cited by-同舟云学术

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Molecularly Controlled Metal−Semiconductor Junctions on Silicon Surface: A Dipole Effect

Published:2008-09-13 Issue:19 Volume:24 Page:11300-11306
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Hiremath R. K.¹,Rabinal M. K.¹,Mulimani B. G.¹,Khazi I. M.¹

Affiliation:

1. Departments of Physics and Chemistry, Karnatak University, Dharwad 580003, India

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/la800882e

Reference53 articles.

1. Semiconductor Surfaces and Interfaces

2. Effect of Molecule−Metal Electronic Coupling on Through-Bond Hole Tunneling across Metal−Organic Monolayer−Semiconductor Junctions

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