Intrinsic carrier concentration of narrow‐gap mercury cadmium telluride based on the nonlinear temperature dependence of the band gap
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351371
Reference10 articles.
1. Calculation of intrinsic carrier concentration in Hg1−xCdxTe
2. Intrinsic carrier concentrations in Hg1−xCdxTe with the use of Fermi–Dirac statistics
3. Intrinsic carrier concentration of Hg1−xCdxTe
4. Intrinsic Carrier Concentration of Hg1−xCdxTe as a Function of x and T Using k·p Calculations
5. Intrinsic carrier concentrations and effective masses in Hg1−xCdxTe
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3. Performance analysis of $${N}^{+}{\text{-}}CdTe/{n}^{0}{\text{-}}{Hg}_{0.824675}{Cd}_{0.175325}Te/{p}^{+}{\text{-}}{Hg}_{0.824675}{Cd}_{0.175325}Te\ n - i - p$$ photodetector operating at 30 μm wavelength for terahertz applications;Optical and Quantum Electronics;2020-07
4. Electron Concentration in the Near-Surface Graded-Gap Layer of MBE n-Hg1–x Cd x Te (x = 0.22–0.40) Determined from the Capacitance Measurements of MIS-Structures;Russian Physics Journal;2017-05
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