Evidence of phosphorus incorporation into InGaAs/InP epilayers after thermal annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1565175
Reference21 articles.
1. High‐performance InGaAs photodetectors on Si and GaAs substrates
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5. Ion implantation of Si in semi-insulating In0.53Ga0.47As:Fe
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1. Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation;Materials Science in Semiconductor Processing;2023-01
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4. Liquid-Phase Monolayer Doping of InGaAs with Si-, S-, and Sn-Containing Organic Molecular Layers;ACS Omega;2017-05-01
5. Determination of Free Electron Density in Sequentially Doped InxGa1-xAs by Raman Spectroscopy;Applied Spectroscopy;2015-02
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