The effects of the initial stages of native-oxide formation on the surface properties of GaSb (001)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4812740
Reference59 articles.
1. The physics and technology of gallium antimonide: An emerging optoelectronic material
2. Antimonide-based compound semiconductors for electronic devices: A review
3. Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
4. Effect of an in situ hydrogen plasma pre-treatment on the reduction of GaSb native oxides prior to atomic layer deposition
5. Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning
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