Far‐infrared emission from Si‐MOSFET’s on high‐index surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90047
Reference6 articles.
1. Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit
2. Voltage-Tunable Far-Infrared Emission from Si Inversion Layers
3. Influence of a One-Dimensional Superlattice on a Two-Dimensional Electron Gas
4. Valley-Valley Splitting in Inversion Layers on a High-Index Surface of Silicon
5. Valley splitting in an n-channel (100) inversion layer on p-type silicon
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1. Strained-layer heteroepitaxy to fabricate self-assembled semiconductor islands;Nanostructured Materials and Nanotechnology;2002
2. Quantum wires in strained silicon quantum wells on tilted substrates;Superlattices and Microstructures;2000-11
3. Evidence for Inter-Miniband Scattering Due to Electron Heating in Si:SiGe Quantum Wells Grown on Tilted Substrates;physica status solidi (b);1997-11
4. Si:SiGe quantum wells grown on (118) substrates: Surface morphology and transport properties;Applied Physics Letters;1997-03-10
5. Minigaps and high-density activated transport inn-channel Si inversion layers;Physical Review B;1988-05-15
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