Si:SiGe quantum wells grown on (118) substrates: Surface morphology and transport properties
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118526
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1. Influence of a One-Dimensional Superlattice on a Two-Dimensional Electron Gas
2. Valley-Valley Splitting in Inversion Layers on a High-Index Surface of Silicon
3. Far‐infrared emission from Si‐MOSFET’s on high‐index surfaces
4. Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures
5. Characterization of n-channel Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy
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