Role of amphoteric defects in the formation of metal/GaAs Schottky barriers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104761
Reference19 articles.
1. Surface States and Rectification at a Metal Semi-Conductor Contact
2. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States
3. Calculation of Schottky barrier heights from semiconductor band structures
4. Band bending and interface states for metals on GaAs
5. Defect‐induced Schottky barrier height modification by pulsed laser melting of GaAs
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On the relationship between interfacial defects and Schottky barrier height in Ag, Au, and Al/n‐GaAs contacts;Journal of Applied Physics;1993-08
2. Cryogenic processing of metal/GaAs schottky diodes;Solid-State Electronics;1992-10
3. Effect of Lt GaAs on Epitaxial Al/GaAs Schottky Diode Characteristics;MRS Proceedings;1992
4. Temperature Dependent Schottky Contacts to InP and GaAs;MRS Proceedings;1991
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